109 lines
4.1 KiB
C
109 lines
4.1 KiB
C
/**
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* @file wl_flash.h
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* @author xushenghao
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* @date 2024-07-22 13:57:02
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* @brief
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* @copyright Copyright (c) 2024 by xxx, All Rights Reserved.
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*/
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/**
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* @brief 磨损平衡算法
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*
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* 1. 初始化block_page大小和当前写入地址
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* 2. 写入数据前，检查剩余空间是否足够
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* a. 如果足够，直接写入数据
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* b. 如果不足够，执行以下步骤：
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* i. 检查是否有已擦除但未使用的block_page，如果有，移动到该block_page继续写入
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* ii. 如果没有已擦除的block_page，检查当前block_page是否已满
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* - 如果已满，移动到下一个block_page
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* - 在移动前，检查该block_page是否有有效数据需要迁移，如果有，则先迁移数据
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* 3. 在决定擦除新的block_page前，采用Wear Leveling算法选择最佳的block_page进行擦除
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* 4. 数据写入后，更新剩余空间大小和当前写入地址
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*/
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/**
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* 使用方法
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*
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#define LL_FLASH_PAGE_SIZE (2 * 1024)
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#define PVD_RESET_STORAGE_START_ADDRESS (256 * LL_FLASH_PAGE_SIZE)
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static void test_wl_flash(void)
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{
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uint32_t address = 0;
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wl_flash_t wf = {
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.wl_flag = TRUE,
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.addr = PVD_RESET_STORAGE_START_ADDRESS,
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.len = 2 * LL_FLASH_PAGE_SIZE,
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.page_size = LL_FLASH_PAGE_SIZE,
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.data_size = sizeof(device_reset_t),
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.write_gran = 8,
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.ops.srand = board_srand,
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.ops.read = flash_read,
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.ops.write = flash_write,
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.ops.erase_page = flash_erase_page,
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};
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wl_flash_init(&wf);
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wl_flash_erase(&wf);
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address = wl_flash_get_current_address(&wf);
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device_reset_t power_on;
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power_on.flag = PVD_RESET_FLAG;
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// 一页2048/16 = 128个数据,2页 = 256个数据，i=255时数据从头开始
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for (uint16_t i = 0; i < 1000; i++)
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{
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wl_flash_write(&wf, (uint8_t *)&power_on, sizeof(device_reset_t));
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wl_flash_set_next_address(&wf);
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address = wl_flash_get_current_address(&wf);
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if (address == wf.addr)
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{
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__NOP();
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}
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}
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}
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*/
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#ifndef __WL_FLASH_H__
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#define __WL_FLASH_H__
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#include "lib.h"
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typedef struct
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{
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BOOL wl_flag; // 开启平衡擦写标志
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uint32_t addr; // Flash 起始地址
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uint32_t len; // Flash 长度
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uint16_t page_size; // Flash 页大小 2^N
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uint16_t data_size; // 数据大小
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/* write minimum granularity, unit: byte.
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1(stm32f2/f4)/ 4(stm32f1)/ 8(stm32l4)
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0 will not take effect. */
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uint8_t write_gran;
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struct
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{
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void (*srand)(void); // 随机数种子
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BOOL(*read)
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(uint32_t addr, uint8_t *buf, uint16_t size);
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BOOL(*write)
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(uint32_t addr, const uint8_t *buf, uint16_t size);
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BOOL(*erase_page)
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(uint32_t page);
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} ops;
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struct
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{
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uint32_t current_address; // 当前准备写入的地址
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uint16_t residue_size; // 剩余可写大小
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uint16_t start_page; // 起始页
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uint16_t page_total; // 总页数
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uint16_t block_page; // 擦除块大小
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} private;
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} wl_flash_t;
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extern void wl_flash_init(wl_flash_t *cfg); ///< 初始化 Flash 磨损平衡算法
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extern uint32_t wl_flash_get_current_address(wl_flash_t *cfg); ///< 获取当前写入地址
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extern void wl_flash_set_next_address(wl_flash_t *cfg); ///< 设置下一个写入地址，下一个写入区域会被擦除
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extern void wl_flash_set_current_address(wl_flash_t *cfg, uint32_t address); ///< 设置当前写入地址
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extern void wl_flash_erase(wl_flash_t *cfg); ///< 擦除 Flash, 如果开启了平衡擦写标志, 则会随机分配写入地址
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extern BOOL wl_flash_write(wl_flash_t *cfg, const uint8_t *buf, uint16_t size); ///< 写入 Flash
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extern BOOL wl_flash_read(wl_flash_t *cfg, uint8_t *buf, uint16_t size); ///< 读取 Flash
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#endif // __WL_FLASH_H__
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