97 lines
3.2 KiB
C
97 lines
3.2 KiB
C
#include "flash.h"
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/**
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*@功能：从内部Flash读取指定字节数据
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*@参数1：ReadAddress：数据起始地址
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*@参数2：*data： 读取到的数据缓存首地址
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*@参数3：length： 读取字节个数
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*/
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void ReadFlashData(uint32_t ReadAddress, uint8_t *data, uint32_t length)
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{
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for(uint32_t i=0;i<length;i++)
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{
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data[i]=*(uint8_t*)(ReadAddress+i); //读取数据
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}
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}
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//读取指定地址的字(32位数据)
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//faddr:读地址
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//返回值:对应数据.
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static uint32_t STMFLASH_ReadWord(uint32_t faddr)
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{
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return *(uint32_t*)faddr;
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}
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//获取某个地址所在的flash扇区
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//addr:flash地址
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//返回值:0~11,即addr所在的扇区
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uint8_t STMFLASH_GetFlashSector(uint32_t addr)
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{
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if(addr<ADDR_FLASH_SECTOR_1)return FLASH_SECTOR_0;
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else if(addr<ADDR_FLASH_SECTOR_2)return FLASH_SECTOR_1;
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else if(addr<ADDR_FLASH_SECTOR_3)return FLASH_SECTOR_2;
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else if(addr<ADDR_FLASH_SECTOR_4)return FLASH_SECTOR_3;
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else if(addr<ADDR_FLASH_SECTOR_5)return FLASH_SECTOR_4;
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else if(addr<ADDR_FLASH_SECTOR_6)return FLASH_SECTOR_5;
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else if(addr<ADDR_FLASH_SECTOR_7)return FLASH_SECTOR_6;
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else if(addr<ADDR_FLASH_SECTOR_8)return FLASH_SECTOR_7;
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else if(addr<ADDR_FLASH_SECTOR_9)return FLASH_SECTOR_8;
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else if(addr<ADDR_FLASH_SECTOR_10)return FLASH_SECTOR_9;
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else if(addr<ADDR_FLASH_SECTOR_11)return FLASH_SECTOR_10;
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return FLASH_SECTOR_11;
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}
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/**
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*@功能：向内部Flash写入数据
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*@参数1：WriteAddress：数据要写入的目标地址（偏移地址）
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*@参数2：*data： 写入的数据首地址
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*@参数3：length：写入数据的个数
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*/
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void WriteFlashData(uint32_t WriteAddress, uint8_t *data, uint32_t length)
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{
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FLASH_EraseInitTypeDef FlashEraseInit;
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HAL_StatusTypeDef FlashStatus=HAL_OK;
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uint32_t SectorError=0;
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uint32_t addrx=0;
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uint32_t endaddr=0;
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if( (WriteAddress < FMC_FLASH_BASE) || ( WriteAddress + length >= FMC_FLASH_END) || (length <= 0) )
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return;
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HAL_FLASH_Unlock(); //解锁
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addrx = WriteAddress; //写入的起始地址
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endaddr = WriteAddress+length; //写入的结束地址
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while(addrx<endaddr) //扫清一切障碍.(对非FFFFFFFF的地方,先擦除)
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{
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if(STMFLASH_ReadWord(addrx)!=0XFFFFFFFF)//有非0XFFFFFFFF的地方,要擦除这个扇区
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{
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FlashEraseInit.TypeErase=FLASH_TYPEERASE_SECTORS; //擦除类型，扇区擦除
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FlashEraseInit.Sector=STMFLASH_GetFlashSector(addrx); //要擦除的扇区
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FlashEraseInit.NbSectors=1; //一次只擦除一个扇区
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FlashEraseInit.VoltageRange=FLASH_VOLTAGE_RANGE_3; //电压范围，VCC=2.7~3.6V之间!!
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if(HAL_FLASHEx_Erase(&FlashEraseInit,&SectorError)!=HAL_OK)
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{
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break;//发生错误了
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}
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}else addrx+=1;
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FLASH_WaitForLastOperation(FLASH_WAITETIME); //等待上次操作完成
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}
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FlashStatus=FLASH_WaitForLastOperation(FLASH_WAITETIME); //等待上次操作完成
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if(FlashStatus==HAL_OK)
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{
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while(WriteAddress<endaddr)//写数据
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{
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if(HAL_FLASH_Program(FLASH_TYPEPROGRAM_BYTE,WriteAddress,*data)!=HAL_OK)//写入数据
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{
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break; //写入异常
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}
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WriteAddress+=1;
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data++;
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}
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}
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HAL_FLASH_Lock(); //上锁
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}
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