141 lines
4.5 KiB
C
141 lines
4.5 KiB
C
#include "flash.h"
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FLASH_ProcessTypeDef p_Flash;
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u16 STMFLASH_BUF[STM_SECTOR_SIZE/2]; //缓存数组
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/**********************************************************************************
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* 函数功能: 读取指定地址的半字(16位数据)
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* 输入参数: faddr：读地址
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* 返 回 值: 对应数据
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* 说 明：
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*/
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u16 STMFLASH_ReadHalfWord(u32 faddr)
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{
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return *(vu16*)faddr;
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}
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#if STM32_FLASH_WREN //如果使能了写
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/**********************************************************************************
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* 函数功能:不检查的写入
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* 输入参数: WriteAddr:起始地址、pBuffer:数据指针、NumToWrite:半字(16位)数
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* 返 回 值: 无
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* 说 明：
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*/
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void STMFLASH_Write_NoCheck(u32 WriteAddr,u16 *pBuffer,u16 NumToWrite)
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{
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u16 i;
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for(i=0;i<NumToWrite;i++)
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{
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HAL_FLASH_Program(FLASH_TYPEPROGRAM_HALFWORD,WriteAddr,pBuffer[i]);
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WriteAddr+=2;//地址增加2.
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}
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}
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/**********************************************************************************
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* 函数功能:从指定地址开始写入指定长度的数据
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* 输入参数:WriteAddr:起始地址(此地址必须为2的倍数!!)、pBuffer:数据指针、NumToWrite：半字(16位)数(就是要写入的16位数据的个数.)
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* 返 回 值: 无
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* 说 明：
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*/
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void STMFLASH_Write(u32 WriteAddr,u16 *pBuffer,u16 NumToWrite)
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{
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u32 secpos; //扇区地址
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u16 secoff; //扇区内偏移地址(16位字计算)
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u16 secremain; //扇区内剩余地址(16位字计算)
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u16 i;
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u32 offaddr; //去掉0X08000000后的地址
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if(WriteAddr<STM32_FLASH_BASE||(WriteAddr>=(STM32_FLASH_BASE+1024*STM32_FLASH_SIZE)))return;//非法地址
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HAL_FLASH_Unlock(); //解锁
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offaddr=WriteAddr-STM32_FLASH_BASE; //实际偏移地址.
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secpos=offaddr/STM_SECTOR_SIZE; //扇区地址 0~64 for STM32F103C8T6
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secoff=(offaddr%STM_SECTOR_SIZE)/2; //在扇区内的偏移(2个字节为基本单位.)
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secremain=STM_SECTOR_SIZE/2-secoff; //扇区剩余空间大小
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if(NumToWrite<=secremain)secremain=NumToWrite;//不大于该扇区范围
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while(1)
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{
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STMFLASH_Read(secpos*STM_SECTOR_SIZE+STM32_FLASH_BASE,STMFLASH_BUF,STM_SECTOR_SIZE/2);//读出整个扇区的内容
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for(i=0;i<secremain;i++) //校验数据
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{
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if(STMFLASH_BUF[secoff+i]!=0XFFFF)break;//需要擦除
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}
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if(i<secremain) //需要擦除
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{
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Flash_PageErase(secpos*STM_SECTOR_SIZE+STM32_FLASH_BASE); //擦除这个扇区
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FLASH_WaitForLastOperation(FLASH_WAITETIME); //等待上次操作完成
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CLEAR_BIT(FLASH->CR, FLASH_CR_PER); //清除CR寄存器的PER位，此操作应该在FLASH_PageErase()中完成！
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//但是HAL库里面并没有做，应该是HAL库bug！
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for(i=0;i<secremain;i++)//复制
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{
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STMFLASH_BUF[i+secoff]=pBuffer[i];
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}
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STMFLASH_Write_NoCheck(secpos*STM_SECTOR_SIZE+STM32_FLASH_BASE,STMFLASH_BUF,STM_SECTOR_SIZE/2);//写入整个扇区
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}else
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{
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FLASH_WaitForLastOperation(FLASH_WAITETIME); //等待上次操作完成
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STMFLASH_Write_NoCheck(WriteAddr,pBuffer,secremain);//写已经擦除了的,直接写入扇区剩余区间.
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}
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if(NumToWrite==secremain)break;//写入结束了
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else//写入未结束
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{
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secpos++; //扇区地址增1
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secoff=0; //偏移位置为0
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pBuffer+=secremain; //指针偏移
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WriteAddr+=secremain*2; //写地址偏移(16位数据地址,需要*2)
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NumToWrite-=secremain; //字节(16位)数递减
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if(NumToWrite>(STM_SECTOR_SIZE/2))secremain=STM_SECTOR_SIZE/2;//下一个扇区还是写不完
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else secremain=NumToWrite;//下一个扇区可以写完了
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}
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};
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HAL_FLASH_Lock(); //上锁
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}
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#endif
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/**********************************************************************************
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* 函数功能:从指定地址开始读出指定长度的数据
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* 输入参数:ReadAddr:起始地址、pBuffer:数据指针、NumToWrite:半字(16位)数
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* 返 回 值: 无
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* 说 明：
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*/
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void STMFLASH_Read(u32 ReadAddr,u16 *pBuffer,u16 NumToRead)
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{
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u16 i;
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for(i=0;i<NumToRead;i++)
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{
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pBuffer[i]=STMFLASH_ReadHalfWord(ReadAddr);//读取2个字节.
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ReadAddr+=2;//偏移2个字节.
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}
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}
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/**********************************************************************************
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* 函数功能:擦除扇区
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* 输入参数:PageAddress:擦除扇区地址
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* 返 回 值: 无
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* 说 明：
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*/
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void Flash_PageErase(uint32_t PageAddress)
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{
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/* Clean the error context */
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p_Flash.ErrorCode = HAL_FLASH_ERROR_NONE;
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#if defined(FLASH_BANK2_END)
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if(PageAddress > FLASH_BANK1_END)
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{
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/* Proceed to erase the page */
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SET_BIT(FLASH->CR2, FLASH_CR2_PER);
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WRITE_REG(FLASH->AR2, PageAddress);
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SET_BIT(FLASH->CR2, FLASH_CR2_STRT);
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}
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else
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{
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#endif /* FLASH_BANK2_END */
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/* Proceed to erase the page */
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SET_BIT(FLASH->CR, FLASH_CR_PER);
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WRITE_REG(FLASH->AR, PageAddress);
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SET_BIT(FLASH->CR, FLASH_CR_STRT);
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#if defined(FLASH_BANK2_END)
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}
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#endif /* FLASH_BANK2_END */
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}
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