82 lines
2.3 KiB
C
82 lines
2.3 KiB
C
/*
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* Copyright (c) 2006-2018, RT-Thread Development Team
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*
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* SPDX-License-Identifier: Apache-2.0
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*
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* Change Logs:
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* Date Author Notes
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* 2018-01-26 armink the first version
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*/
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#include "eeprom_m95.h"
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#include <string.h>
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#include <fal.h>
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static int init(void);
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static int erase(long offset, size_t size);
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static int read1(long offset, uint8_t *buf, size_t size);
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static int write1(long offset, const uint8_t *buf, size_t size);
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static int read2(long offset, uint8_t *buf, size_t size);
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static int write2(long offset, const uint8_t *buf, size_t size);
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// 1.定义 flash 设备
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struct fal_flash_dev eeprom_m95_1 =
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{
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.name = EEPROM_M95_1_DEV_NAME,
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.addr = 0x000000,
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.len = EEPROM_M95_1_SIZE,
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.blk_size = EEPROM_M95_1_BLOCK_SIZE,
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.ops = {init, read1, write1, erase},
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.write_gran = 8}; // 设置写粒度，单位 bit， 0 表示未生效（默认值为 0 ），该成员是 fal 版本大于 0.4.0 的新增成员。各个 flash 写入粒度不尽相同，可通过该成员进行设置，以下列举几种常见 Flash 写粒度
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struct fal_flash_dev eeprom_m95_2 =
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{
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.name = EEPROM_M95_2_DEV_NAME,
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.addr = 0x000000,
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.len = EEPROM_M95_2_SIZE,
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.blk_size = EEPROM_M95_2_BLOCK_SIZE,
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.ops = {init, read2, write2, erase},
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.write_gran = 8};
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static int init(void)
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{
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return 1;
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}
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static int erase(long offset, size_t size)
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{
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__NOP();
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return size;
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}
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static int read1(long offset, uint8_t *buf, size_t size)
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{
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/* You can add your code under here. */
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uint32_t addr = eeprom_m95_1.addr + offset;
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eeprom_m95_read(M95_1, addr, buf, size);
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return size;
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}
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static int write1(long offset, const uint8_t *buf, size_t size)
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{
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uint32_t addr = eeprom_m95_1.addr + offset;
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eeprom_m95_write(M95_1, addr, (uint8_t *)buf, size);
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return size;
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}
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static int read2(long offset, uint8_t *buf, size_t size)
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{
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/* You can add your code under here. */
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uint32_t addr = eeprom_m95_2.addr + offset;
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eeprom_m95_read(M95_2, addr, buf, size);
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return size;
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}
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static int write2(long offset, const uint8_t *buf, size_t size)
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{
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uint32_t addr = eeprom_m95_2.addr + offset;
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eeprom_m95_write(M95_2, addr, (uint8_t *)buf, size);
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return size;
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}
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